Semiconductor memory with sense amplifier equalizer having...

Details Semiconductor memory with sense amplifier equalizer having... Semiconductor memory with sense amplifier equalizer having...

2006-08-29

2006-08-29

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S203000, C365S189110, C365S202000

Reexamination Certificate

active

07099217

ABSTRACT:
A sense amplifier is connected to a pair of bit lines to read/write data. A bit line equalizer equalizes the potentials of the pair of bit lines. A sense amplifier equalizer equalizes the potentials of two power supply nodes of the sense amplifier. The sense amplifier equalizer is constituted by two types of MOS transistors whose gate oxide films have different thicknesses. MOS transistors of one type are formed in a thick film type Tr area. MOS transistors of the other type are formed in a thick film type Tr area.

REFERENCES:
patent: 5555210 (1996-09-01), Kato
patent: 5640355 (1997-06-01), Muraoka et al.
patent: 6181618 (2001-01-01), Inaba et al.
patent: 6205068 (2001-03-01), Yoon
patent: 6285613 (2001-09-01), Koya
patent: 6333662 (2001-12-01), Umezawa et al.
patent: 6556507 (2003-04-01), Toda et al.
patent: 6602751 (2003-08-01), Oohashi
patent: 2004/0233753 (2004-11-01), Haga et al.
patent: 5-291535 (1993-11-01), None
patent: 2000-215676 (2000-08-01), None

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