Semiconductor memory with self fuse programming

Details Semiconductor memory with self fuse programming Semiconductor memory with self fuse programming

2006-04-25

2006-04-25

Mai, Son (Department: 2827)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S189070, C365S200000

Reexamination Certificate

active

07035158

ABSTRACT:
A fault after an assembling process is saved by using a tester. An error detector circuit compares read data from a memory cell and data from an external input/output terminal by means of a comparator circuit, thereby determining whether a memory cell is good or faulty. The error detector circuit outputs a sense signal COMPERR in the case where the memory cell is faulty. A self fuse program circuit causes a latch circuit LAi to latch an external address as a save address upon receipt of the sense signal COMPERR. By a counter Ci and a switch circuit SW, programming of a save address is carried out by transferring the save address latched at the latch circuit LAi to a fuse program circuit FPi on one bit by one bit basis.

REFERENCES:
patent: 5724366 (1998-03-01), Furutani
patent: 6256237 (2001-07-01), Ho et al.
patent: 6310807 (2001-10-01), Ooishi et al.
patent: 6324106 (2001-11-01), Urakawa
patent: 6788596 (2004-09-01), Kim et al.
patent: 6809982 (2004-10-01), Fujima
patent: 2002-042494 (2002-02-01), None
patent: 2002-197889 (2002-07-01), None

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