Semiconductor memory with increased capacitive storage capabilit

Details Semiconductor memory with increased capacitive storage capabilit Semiconductor memory with increased capacitive storage capabilit

1992-06-10

1994-01-25

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Capacitors

257306, 257307, 257303, H01L 2714

Patent

active

052821595

ABSTRACT:
A semiconductor memory includes a transistor and a capacitor which are formed on a semiconductor substrate, wherein the capacitor comprises in superposed layers a first capacitor composed of an impurity diffused layer formed in a surface layer of the semiconductor substrate, a first dielectric formed on the impurity diffused layer and a lower plate electrode formed on the first dielectric and serving as a field plate; a second capacitor composed of the lower plate electrode, a second dielectric formed on the lower plate electrode and a node electrode formed on the second dielectric; and a third capacitor composed of the node electrode, a third dielectric formed on the node electrode and an upper plate electrode formed on the third dielectric.

REFERENCES:
patent: 4240092 (1980-12-01), Kuo
patent: 4460911 (1984-07-01), Salters
patent: 4641165 (1987-02-01), Iizuka et al.
patent: 4700457 (1987-10-01), Matsukawa

Affiliated with

Also associated with

Rating

Semiconductor memory with increased capacitive storage capabilit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory with increased capacitive storage capabilit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory with increased capacitive storage capabilit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-733041