Semiconductor memory with ferroelectric capacitors

Details Semiconductor memory with ferroelectric capacitors Semiconductor memory with ferroelectric capacitors

1995-12-20

1997-03-25

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365 65, 365102, G11C 1122

Patent

active

056151454

ABSTRACT:
A semiconductor memory which includes a plurality of memory cells each having first and second capacitors connected in series and a field-effect transistor whose source or drain is connected to a node between the first and second capacitors. The memory cells are arranged at intersections of bit lines and word lines thereby forming a matrix. The first capacitor of each memory cell is a ferroelectric capacitor using a ferroelectric material as an insulating film. A plate electrode of the first capacitor of each memory cell is held at a first potential when the memory is operated in a first mode and the plate electrode of the first capacitor is held at a second potential when the memory is operated in a second mode. The first potential is different from the second potential.

REFERENCES:
patent: 5383150 (1995-01-01), Nakamura et al.

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