Semiconductor memory with externally controlled dummy comparator

Details Semiconductor memory with externally controlled dummy comparator Semiconductor memory with externally controlled dummy comparator

1991-03-04

1992-09-15

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read/write circuit

Including signal comparison

36518909, 365185, 365201, 365208, 365210, 365226, G11C 700

Patent

active

051483971

ABSTRACT:
A semiconductor memory which is capable of measuring a threshold voltage in a memory cell. The semiconductor memory comprises memory arrays having a plurality of memory cells arranged in a matrix, means for selecting the memory cell, and a sense amplifier for comparing a current flowing through the selected memory cell with a current flowing through a dummy cell and provides an output indicative of a resultant comparison value. The memory cells each include a first switching means having a first transconductance at the time "1" is written in the memory cell and having a second transconductance at the time "0" is written in the memory cell, the value of the second transconductance being greater than the value of the first transconductance. The dummy memory cell includes a second switching means having a third transconductance value of which is in the middle between values of the first and the second transconductance. The memory cells and the dummy cell each have a gate coupled to respective external terminals. A selected one of the terminals receives increasing voltage.

REFERENCES:
patent: 4680762 (1987-07-01), Hardee et al.
patent: 4761765 (1988-08-01), Hashimoto
patent: 4799195 (1989-01-01), Iwahashi et al.
patent: 4802138 (1989-01-01), Shimamune
patent: 4817052 (1989-03-01), Shinoda et al.
patent: 4974207 (1990-11-01), Hashimoto

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