Semiconductor memory with burst mode feature for the redundant m

Details Semiconductor memory with burst mode feature for the redundant m Semiconductor memory with burst mode feature for the redundant m

1995-09-27

1998-04-07

Swann, Tod R.

Static information storage and retrieval

Read/write circuit

Bad bit

36523003, G11C 700

Patent

active

057372691

ABSTRACT:
In a semiconductor memory, the output of a ROM (Read Only Memory) storing the address of replacement with a redundant cell is compared with the leading address of a burst input to the memory from the outside. A signal representative of the coincidence the leading address and the replaced address is attained without waiting for the generation of internal addresses, so that a rapid access to a redundant cell array is achievable. The replacement to the redundant cell is effected collectively on a burst length basis. Alternatively, the replacement may be effected by activating the cell array with the coincidence signal, then comparing the internal addresses generated later with the replaced address in the burst, and then switching the input and output portion of each array.

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