Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing
Reexamination Certificate
2011-03-08
2011-03-08
Kerveros, James C (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Memory testing
C365S230030
Reexamination Certificate
active
07904767
ABSTRACT:
The semiconductor memory testing device includes a test signal decoder decoding burn-in test mode signals which generates a first test signal for use in controlling entire main wordlines and which generates a second test signal for use in controlling sub wordlines. When the first and second test signals are in an disabled state, the semiconductor memory testing device also includes a plurality of bank control units generating a multi wordline test mode signal as a multi wordline test signal corresponding to a bank control signal, and simultaneously enabling a plurality of wordlines in accordance to the multi wordline test signal to perform a test. The semiconductor memory testing device reduces a testing time and current consumption and thus enhances a more stable voltage drop when performing continuous multi wordline test on a per bank basis.
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Hynix / Semiconductor Inc.
Kerveros James C
Ladas & Parry LLP
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