Semiconductor memory structures

Static information storage and retrieval – Systems using particular element – Semiconductive

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357 54, G11C 1300

Patent

active

040577880

ABSTRACT:
A method of storing electric charges in a metal-nitride-oxide-semiconductor memory element by setting the threshold voltage of the element at any of a substantial number of voltages by applying both a DC voltage corresponding to the analog voltage to be stored and an AC voltage which is gradually reduced.

REFERENCES:
patent: 3653002 (1972-03-01), Goffee
patent: 3832700 (1974-08-01), Wu
patent: 3846768 (1974-11-01), Krick

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