Semiconductor memory structure for improved charge storage

Details Semiconductor memory structure for improved charge storage Semiconductor memory structure for improved charge storage

1998-02-20

1999-11-02

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Capacitors

36523006, G11C 1124

Patent

active

059782544

ABSTRACT:
A circuit is designed with a decoder circuit (10), responsive to a first input signal (81) having a first voltage range, for producing a first output signal. An output circuit (11), responsive to the first output signal, produces a second output signal (26) having a second voltage range. The second voltage range includes a voltage less than a least voltage of the first voltage range and a voltage greater than a greatest voltage of the first voltage range.

REFERENCES:
patent: 4628486 (1986-12-01), Sakui
patent: 5238860 (1993-08-01), Sawada
patent: 5297104 (1994-03-01), Nakashima
patent: 5363338 (1994-11-01), Oh
patent: 5410508 (1995-04-01), McLaury

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