Semiconductor memory storage device capable of high...

Details Semiconductor memory storage device capable of high... Semiconductor memory storage device capable of high...

2006-05-30

2006-05-30

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Accelerating charge or discharge

C365S210130, C365S230060, C365S189060, C365S189110

Reexamination Certificate

active

07054211

ABSTRACT:
A semiconductor memory storage is disclosed, in which the gate of each of a plurality of n-channel transistors is connected to the corresponding one of a plurality of word lines on the output side of each word line driver. The source of the n-channel transistor is connected through a selective switching element to the gate of the corresponding one of a plurality of replica transistors connected to a dummy bit line. The gate of each replica transistor is connected to the corresponding one of discharge transistors. The dummy bit line is connected to a sense amplifier through a logic gate.

REFERENCES:
patent: 5268865 (1993-12-01), Takasugi
patent: 5703821 (1997-12-01), Baroni et al.
patent: 6341100 (2002-01-01), Fujioka
patent: 6487115 (2002-11-01), Tsuruda
patent: 6525985 (2003-02-01), Mizuno et al.
patent: 6545918 (2003-04-01), Song
patent: 6556472 (2003-04-01), Yokozeki
patent: 2003/0132457 (2003-07-01), Lee et al.
patent: 2001-351385 (2001-12-01), None

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