Semiconductor memory storage device and its redundant method

Details Semiconductor memory storage device and its redundant method Semiconductor memory storage device and its redundant method

2006-06-13

2006-06-13

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S063000

Reexamination Certificate

active

07061816

ABSTRACT:
A semiconductor memory device includes a memory block having memory cells connected to global bit lines and global word lines are arranged in matrix constitutes a memory block column sharing global bit lines, the memory block column being developed in global word line wiring direction, wherein at least two of memory block columns adjoining each other constitute a to-be-remedied unit, and redundant block(s), which is/are arranged sharing global bit lines with the memory block column(s), which is/are provided in each to-be-remedied unit and number of redundant block(s) is/are smaller than that of memory block column(s) included in the to-be-remedied unit. A minimum number of redundant memory blocks necessary for defectiveness remedy can be provided thereby enhancing the yield with optimization of the manufacturing and circuits. Redundancy remedy efficiency can also be improved while minimizing increased chip die size of the semiconductor memory device.

REFERENCES:
patent: 4918662 (1990-04-01), Kondo
patent: 5822257 (1998-10-01), Ogawa
patent: 6084807 (2000-07-01), Choi
patent: 6418051 (2002-07-01), Manstretta et al.
patent: 6643196 (2003-11-01), Sugio
patent: 2002/0001237 (2002-01-01), Manstretta et al.
patent: 2002/0012282 (2002-01-01), Saito et al.
patent: 09-128962 (1997-05-01), None
patent: 2002-269994 (2002-09-01), None
Toru Tanzawa, et al., 44-mm2Four-Bank Eight-Word Page-Read 64-Mb Flash Memory With Flexible Block Redundancy and Fast Accurate Word-Line Voltage Controller, IEEE Journal of Solid-State Circuits, vol., 37 No. 11, p. 1485-1492, Nov. 2002.

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