Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-26
2010-11-09
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257SE21209, C257SE21210, C257SE21114, C257SE21423, C257SE29301, C438S257000, C438S261000, C438S264000, C438S584000
Reexamination Certificate
active
07829935
ABSTRACT:
A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.
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Higashi Seiichiro
Makihara Katsunori
Miyazaki Seiichi
Foley & Lardner LLP
Hiroshima University
Nguyen Dao H
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