Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-01
2011-03-01
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21294, C257SE29300, C438S584000, C438S593000
Reexamination Certificate
active
07898020
ABSTRACT:
A semiconductor memory includes a composite floating structure where an insulation film is formed on a semiconductor substrate, Si-based quantum dots covered with an extremely thin Si oxide film is formed on the insulation film, silicide quantum dots covered with a high dielectric insulation film are formed on the extremely thin Si oxide film, and Si-based quantum dots covered with a high dielectric insulation film are formed on the high dielectric insulation film. Multivalued memory operations can be conducted at a high speed and with stability by applying a certain positive voltage to a gate electrode to accumulate electrons in the silicide quantum dots and by applying a certain negative voltage and weak light to the gate electrode to emit the electrons from the silicide quantum dots.
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Higashi Seiichiro
Makihara Katsunori
Miyazaki Seiichi
Foley & Lardner LLP
Hiroshima University
Malsawma Lex
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