Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-25
2005-10-25
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257S315000, C257S316000
Reexamination Certificate
active
06958507
ABSTRACT:
A high capacity, fast access dynamic random access memory is provided. Furthermore, a pipelined write method can be realized at each array block by affixing a latch between the sense amplifier and write data line for each column. In this manner, a data write phase can occur simultaneously with the pre-read phase of the following address. Using this method, the effective access speed to the array block can be increased, yielding a fast access cache memory.
REFERENCES:
patent: 5838609 (1998-11-01), Kuriyama
patent: 6518620 (2003-02-01), Chan et al.
patent: 6707751 (2004-03-01), Iwahashi et al.
patent: 10-134565 (1996-10-01), None
Atwood Bryan
Sakata Takeshi
Watanabe Takao
A. Marquez, Esq. Juan Carlos
Abraham Fetsum
Fisher Esq. Stanley P.
Hitachi , Ltd.
Reed Smith LLP
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