Semiconductor memory operating with low supply voltage

Details Semiconductor memory operating with low supply voltage Semiconductor memory operating with low supply voltage

1995-10-05

1996-09-10

Clawson, Jr., Joseph E.

Static information storage and retrieval

Powering

365149, 36518909, 365203, 36523003, G11C 11401

Patent

active

055552153

ABSTRACT:
The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.

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