Semiconductor memory operating electrically and optically, retai

Details Semiconductor memory operating electrically and optically, retai Semiconductor memory operating electrically and optically, retai

1999-01-08

2000-11-14

Zarabian, A

Static information storage and retrieval

Systems using particular element

Semiconductive

365106, G11C 1136

Patent

active

061479012

ABSTRACT:
The present invention provides a semiconductor memory capable of retaining information after removing a power supply and of storing information with an optical input. A memory cell is comprising an n-InP substrate, a first semiconductor (n-InGaAs) layer, a second semiconductor (i-InGaAs) layer, a third semiconductor (p-InGaAs) layer, a fourth semiconductor (i-InGaAs) layer and a fifth semiconductor (n-InGaAs) layer. The first to fifth semiconductor layers are stacked in this order on the n-InP substrate. A bias voltage is applied between the n-InP substrate and the fifth semiconductor layer to control a height of a TBD formed in the above multi-layer structure so that carriers may move and electrons can be stored in one of the second and fourth semiconductor layers.

REFERENCES:
patent: 4813016 (1989-03-01), Okada
patent: 4972370 (1990-11-01), Morimoto
patent: 5144397 (1992-09-01), Tokuda
patent: 5663572 (1997-09-01), Sakata

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