Semiconductor memory operable as static RAM or EAROM

Details Semiconductor memory operable as static RAM or EAROM Semiconductor memory operable as static RAM or EAROM

1981-10-16

1983-09-06

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365228, 365184, G11C 1140

Patent

active

044033060

ABSTRACT:
A semiconductor memory comprises a CMOS flip-flop circuit and a pair of N-channel MNOS (Metal Nitride Oxide Semiconductor) transistors. A first MNOS transistor is connected between a first pair of CMOS transistors and a second MNOS transistor is connected between a second pair of CMOS transistors. The gates of the first and second MNOS transistors are connected to a control signal line. The control signal line is normally maintained at a reference voltage. When an erase pulse of first polarity is supplied to the control signal line, the first and second MNOS transistors are turned ON, so that the memory operates in the static RAM mode. When a write pulse of second polarity is supplied to the control signal line, the data stored in the static RAM mode becomes nonvolatile.

REFERENCES:
patent: 3950737 (1976-04-01), Uchida et al.
patent: 4044343 (1977-08-01), Uchida et al.
patent: 4175290 (1979-11-01), Harari
patent: 4287574 (1981-09-01), Uchida

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