Semiconductor memory of high integration, large capacity, and lo

Details Semiconductor memory of high integration, large capacity, and lo Semiconductor memory of high integration, large capacity, and lo

1996-07-31

1998-04-07

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Capacitors

36518909, 365226, G11C 1124

Patent

active

057372632

ABSTRACT:
A semiconductor memory has a plurality of bit lines, a plurality of word lines, a plurality of memory cells, a power source unit, and a plurality of sense amplifiers. The memory cells are formed at intersection portions of the bit lines and the word lines, and each of the memory cells includes a transistor and a capacitor. The power source unit is connected to the capacitors of the memory cells. Each of the sense amplifiers, which is connected to a corresponding one of the bit lines and the power source, is used to amplify a voltage between a potential of the corresponding bit line. This memory realizes high integration, large capacity, and low power consumption.

REFERENCES:
patent: 4409672 (1983-10-01), Takemae
patent: 4965769 (1990-10-01), Etoh et al.
patent: 5337270 (1994-08-01), Kawata et al.

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