Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2006-08-22
2006-08-22
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S233100
Reexamination Certificate
active
07095661
ABSTRACT:
There is the problem that since C/A signals in a DIMM are distributed to respective DRAMs through a register in the DIMM and DQ signals are wired directly from terminals in the DIMM, their timing is difficult to synchronize. The register for speeding up the C/A signals of the DIMM that operates with high speed is provided, and a wiring from the register is set to a daisy-chain wiring. Then, by a timing adjustment circuit provided in the DRAM, a wiring delay time difference between the C/A signals and the clock signals, which are different depending on positions of the DRAMs, is such that the sum of a delay time from the register to each DRAM and a delay amount due to the timing adjustment circuit is made equal to a delay time of the farthest DRAM.
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Funaba Seiji
Nishio Yoji
Osaka Hideki
Elpida Memory Inc.
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Nguyen Tan T.
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