Semiconductor memory including voltage detection circuit for...

Details Semiconductor memory including voltage detection circuit for... Semiconductor memory including voltage detection circuit for...

2009-10-21

2011-11-22

Phung, Ahn (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189090, C365S194000

Reexamination Certificate

active

08064241

ABSTRACT:
A voltage detection circuit outputs a detection signal when an amount of charges read to one of a pair of bit lines reaches a predetermined amount. A mask circuit of a timing generator masks an output of a sense amplifier activation signal until the detection signal is output. A sense amplifier determines logics of data read to the bit lines from memory cells in synchronization with the sense amplifier activation signal. An operation of the sense amplifier is started after predetermined amounts of charges are read from the memory cells to the bit lines, that is, after the detection signal is output. Accordingly, even when a timing to output a timing signal becomes early due to a variance of manufacturing conditions of a semiconductor memory, data read from the memory cells can be latched correctly in the sense amplifier. As a result, malfunctions of the semiconductor memory can be prevented.

REFERENCES:
patent: 5357468 (1994-10-01), Satani et al.
patent: 6661697 (2003-12-01), Yamamoto et al.
patent: 6836426 (2004-12-01), Fukushi et al.
patent: 2002/0080670 (2002-06-01), Kawasumi
patent: 2003/0202412 (2003-10-01), Nii et al.
patent: 2004/0062115 (2004-04-01), Takeuchi et al.
patent: 2004/0183508 (2004-09-01), Toyoda et al.
patent: 2005/0195639 (2005-09-01), Fukushi et al.
patent: 2005/0207239 (2005-09-01), Kodama
patent: 2006/0023485 (2006-02-01), Yamamura
patent: 2008/0247227 (2008-10-01), Tonomura et al.
patent: 07-050094 (1995-02-01), None
patent: 09-231771 (1997-09-01), None
patent: 11-203873 (1999-07-01), None
patent: 2002-133857 (2002-05-01), None
patent: 2002-260386 (2002-09-01), None
patent: 2003-323792 (2003-11-01), None
patent: 2005-129151 (2005-05-01), None
patent: 2006-31798 (2006-02-01), None
International Search Report of PCT/JP2007/000533. mailing date of Feb. 26, 2008.
Shoichiro Kawashima, et al, “Bitline GND Sensing Technique for Low-Voltage Operation FeRAM”, Journal of Solid-State Circuits, May 2002, pp. 592-597, vol. 37, No. 5.
Notification Concerning Transmittal of Translation of International Preliminary Report on Patentability (Form PCT/IB/326) of International Application No. PCT/JP2007/000533 mailed Dec. 3, 2009 with Forms PCT/IB/373, PCT/ISA/237 and PCT/IB/338.
Supplementary European Search Report mailed Jun. 29, 2011 for corresponding European Application No. EP 07 73 7189.

Affiliated with

Also associated with

Rating

Semiconductor memory including voltage detection circuit for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory including voltage detection circuit for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory including voltage detection circuit for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4301121