Semiconductor memory including static random access memory...

Details Semiconductor memory including static random access memory... Semiconductor memory including static random access memory...

2005-12-20

2005-12-20

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S230050, C365S177000

Reexamination Certificate

active

06977837

ABSTRACT:
A semiconductor memory is formed of first, second, third, fourth, fifth and sixth field effect transistors. The first and second transistors have a first line as gates, one ends of current paths of the first and second transistors are connected to a reference potential electrode. The third and fourth transistors have a second line as gates, and one ends of current paths of the third and fourth transistors are connected to the reference electrode. The fifth transistor has a first word line as a gate, and one end of a current path of the fifth transistor is connected to the other ends of the current paths of the first and second transistors. The sixth transistor having a second word line as a gate, and one end of a current path of the sixth transistor is connected to the other ends of the current paths of the third and fourth transistors.

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patent: 2004/0223375 (2004-11-01), Annavajjhala
patent: 2-263473 (1990-10-01), None
E. J. Nowak, et al., “A Functional FinFET-DGCMOS SRAM Cell”, IEDM Technical Digest, International Electron Devices meeting 2002, pp. 411-414, 2002.

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