Semiconductor memory including self-timing circuit

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S233100

Reexamination Certificate

active

07457182

ABSTRACT:
A semiconductor memory including a sense amplifier circuit for reading the data stored in memory cells and particularly to a semiconductor memory including a self-timing circuit for improving margin for reading data by controlling activation timing of the sense amplifier drive signal in accordance with characteristics of internal memory cells.

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patent: 2003/0202412 (2003-10-01), Nii et al.
patent: 2003-36678 (2003-02-01), None
patent: 2003-100083 (2003-04-01), None
patent: 2003-323792 (2003-11-01), None

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