Semiconductor memory in which access to broken word line is inhi

Details Semiconductor memory in which access to broken word line is inhi Semiconductor memory in which access to broken word line is inhi

1999-09-29

2000-08-29

Phan, Trong Q.

Static information storage and retrieval

Read/write circuit

Bad bit

36523006, G11C 700

Patent

active

061117994

ABSTRACT:
A semiconductor memory is provided with a memory cell, a driver circuit driving the memory cell, a first word line and a second word line. The first word line is connected to the driver circuit and transmits a first potential and a second potential outputted by the driver circuit to the memory cell. The second word line is connected to the driver circuit and transmits the first potential and the second potential to the memory cell. The second word line has a resistance higher than that of the first word line. In this way, even if a word line is broken, a multiple selection phenomenon is not incurred.

REFERENCES:
patent: 4429388 (1984-01-01), Fukushima et al.
patent: 4905194 (1990-02-01), Ohtsuka et al.
patent: 5005068 (1991-04-01), Ikeda et al.
patent: 5483490 (1996-01-01), Iwai et al.
patent: 5983346 (1999-11-01), Wendell

Affiliated with

Also associated with

Rating

Semiconductor memory in which access to broken word line is inhi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory in which access to broken word line is inhi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory in which access to broken word line is inhi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1255700