Semiconductor memory having sense amplifier architecture

Details Semiconductor memory having sense amplifier architecture Semiconductor memory having sense amplifier architecture

2005-02-22

2005-02-22

Le, Thong (Department: 2818)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S196000

Reexamination Certificate

active

06859409

ABSTRACT:
The semiconductor memory device includes a plurality of first data sense amplifiers and a plurality of second data sense amplifiers. Each first data sense amplifier being a voltage sense amplifier, and each first data sense amplifier associated with data lines of a first type, which lead from bit line sense amplifiers. Each second data sense amplifier including a current sense amplifier and a voltage sense amplifier, and each second data sense amplifier associated with data lines of a second type, which lead from bit line sense amplifiers.

REFERENCES:
patent: 5901102 (1999-05-01), Furutani
patent: 6617885 (2003-09-01), Lim et al.

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