Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1986-11-03
1988-05-24
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Bad bit
365210, 371 50, G11C 1300, G11C 1140
Patent
active
047470801
ABSTRACT:
A semiconductor memory having a self correction function, includes: a plurality of memory cells which are divided into a plurality of area groups, store data, and are arranged in a matrix; a plurality of parity cells, associated with the area groups of the memory cells, for forming horizontal and vertical parity codes together with the data in the memory cells of the respective area groups; word lines for simultaneously selecting the plurality of memory cells and the parity cells; bit lines for exchanging data with the memory cells; parity bit lines for exchanging parity bit data with the parity cells; selectors for selecting data of the memory cells and data of the parity cell in the area group to which a memory cell to be checked belongs; means for performing parity check of a plurality of data from the selectors; and means for automatically correcting a bit error using the output from the parity check means. The memory cells divided into the area groups and the parity cells combined therewith are arranged so as not to belong to the same horizontal and vertical arrays of the matrix.
REFERENCES:
patent: 4456980 (1984-06-01), Yamada et al.
Fears Terrell W.
Nippon Telegraph & Telephone Corporation
LandOfFree
Semiconductor memory having self correction function does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory having self correction function, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory having self correction function will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1062930