Semiconductor memory having selectively activated blocks includi

Details Semiconductor memory having selectively activated blocks includi Semiconductor memory having selectively activated blocks includi

1986-11-05

1989-01-03

Hecker, Stuart N.

Static information storage and retrieval

Powering

Conservation of power

365 63, 365181, 365230, G11C 700

Patent

active

047962348

ABSTRACT:
It is contemplated to realize a semiconductor memory with a large memory capacity, high in integration and low in power dissipation. A semiconductor memory is disclosed, comprising a plurality of blocks each having a memory cell array and sense amplifier(s) to differentially amplify signals read out from the array, wherein a common driving line of amplifiers composed of N-channel MOS transistors among said sense amplifiers and a common driving line of amplifiers composed of P-channel MOS transistors among the sense amplifers are connected between different blocks.

REFERENCES:
patent: 4222112 (1980-09-01), Clemons et al.
patent: 4482984 (1984-11-01), Oritani
patent: 4528646 (1985-07-01), Ochii et al.

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