Semiconductor memory having circuitry for discharging a digit li

Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge

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Details

365185, 36518906, G11C 1140

Patent

active

049051970

ABSTRACT:
A semiconductor memory having a plurality of programmable memory cells includes discharge circuits for discharging a residual charge which remains on a digital line and a signal line coupling the digit line to a sensing amplifier after a programming of a memory cell is completed. The discharge circuit is coupled to the digit line on the signal line and is activated after the programming is completed. The discharge circuit is inactivated when the programmed data is verified.

REFERENCES:
patent: 3765002 (1973-10-01), Basse
patent: 4301535 (1981-11-01), McKenny et al.
patent: 4368524 (1983-01-01), Nakamura
patent: 4677590 (1987-06-01), Arakawa
patent: 4720816 (1988-01-01), Matsuoka et al.

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