Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-23
2010-12-07
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257SE29129, C257SE29300
Reexamination Certificate
active
07847338
ABSTRACT:
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor memory cell includes a fin structure extending from a substrate, the fin structure including a floating substrate region having a first conductivity type configured to store data as volatile memory; first and second regions interfacing with the floating substrate region, each of the first and second regions having a second conductivity type; first and second floating gates or trapping layers positioned adjacent opposite sides of the floating substrate region; a first insulating layer positioned between the floating substrate region and the floating gates or trapping layers, the floating gates or trapping layers being configured to receive transfer of data stored by the volatile memory and store the data as nonvolatile memory in the floating gates or trapping layers upon interruption of power to the memory cell; a control gate wrapped around the floating gates or trapping layers and the floating substrate region; and a second insulating layer positioned between the floating gates or trapping layers and the control gate; the substrate including an isolation layer that isolates the floating substrate region from a portion of the substrate below the isolation layer.
REFERENCES:
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5519831 (1996-05-01), Holzhammer
patent: 6163048 (2000-12-01), Hirose et al.
patent: 6376876 (2002-04-01), Shin et al.
patent: 7085156 (2006-08-01), Rerrant et al.
patent: 7118986 (2006-10-01), Steigerwalt et al.
patent: 7224019 (2007-05-01), Hieda et al.
patent: 7259420 (2007-08-01), Anderson et al.
patent: 7285820 (2007-10-01), Park et al.
patent: 7329580 (2008-02-01), Choi et al.
patent: 7473611 (2009-01-01), Cho et al.
patent: 7504302 (2009-03-01), Mathew et al.
patent: 7579241 (2009-08-01), Hieda et al.
patent: 7622761 (2009-11-01), Park et al.
patent: 2005/0024968 (2005-02-01), Lee et al.
patent: 2005/0124120 (2005-06-01), Du et al.
patent: 2006/0044915 (2006-03-01), Park et al.
patent: 2006/0125010 (2006-06-01), Bhattacharyya
patent: 2006/0237770 (2006-10-01), Huang et al.
patent: 2006/0278915 (2006-12-01), Lee et al.
patent: 2007/0004149 (2007-01-01), Tews
patent: 2007/0090443 (2007-04-01), Choi et al.
patent: 2007/0164352 (2007-07-01), Padilla et al.
patent: 2007/0210338 (2007-09-01), Orlowski
patent: 2007/0215954 (2007-09-01), Mouli
patent: 2007/0284648 (2007-12-01), Park et al.
patent: 2008/0080248 (2008-04-01), Lue et al.
patent: 2008/0123418 (2008-05-01), Widjaja
patent: 2008/0224202 (2008-09-01), Young et al.
patent: 2008/0265305 (2008-10-01), He et al.
patent: 2008/0303079 (2008-12-01), Cho et al.
patent: 2009/0065853 (2009-03-01), Hanafi
patent: 2009/0081835 (2009-03-01), Kim et al.
patent: 2009/0085089 (2009-04-01), Chang et al.
Han et al. Programming/Erasing Characteristics of 45 nm NOR-Type Flash Memory Based on SOI FinFET Structure. vol. 47. Nov. 2005, pp. S564-S567.
Headland. Hot electron injection, Feb. 19, 2004.
Okhonin et al. A SOI Capacitor-less 1T-DRAM Concept. 2001, pp. 153-154.
Ranica et al. Scaled 1T-bulk devices built with CMOS 90nm technology for low-cost eDRAM applications. Pascale.mazoyer@st.com, 2004, pp. 128-129.
Law Office of Alan W Cannon
Ngo Ngan
LandOfFree
Semiconductor memory having both volatile and non-volatile... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory having both volatile and non-volatile..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory having both volatile and non-volatile... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4217868