Semiconductor memory having barrier transistors connected betwee

Details Semiconductor memory having barrier transistors connected betwee Semiconductor memory having barrier transistors connected betwee

1989-02-09

1990-06-05

Gossage, Glenn A.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365190, 365205, 365222, G11C 700

Patent

active

049319922

ABSTRACT:
A semiconductor memory comprises a memory cell for storing data, a bit line pair for transfering the data, a sense amplifier for amplifying the data from the bit line pair, a restore circuit directly connected to the bit line pair for restoring the data in the semiconductor memory, and a pair of constant voltage barrier transistors connected between the restore circuit and the sense amplifier for increasing the speed of sensing.

REFERENCES:
patent: 4003035 (1977-01-01), Hoffman et al.
patent: 4169233 (1979-09-01), Harastzi
patent: 4542483 (1985-09-01), Procyk
patent: 4551641 (1985-11-01), Pelley
patent: 4794569 (1988-12-01), Sahara et al.
Lu et al., "Half-VDD Bit-Line Sensing Scheme in CMOS DRAM's," IEEE Journal of Solid-State Circuits, vol. SC-19, No. 4, pp. 451-454, Aug. 1984.

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