Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1999-03-29
2000-12-26
Tran, Andrew Q.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365226, 3651852, 36518529, 327536, 327537, 327535, 327530, 327538, 327540, 327541, 327543, G11C 514, G05F 110
Patent
active
061669687
ABSTRACT:
A voltage supply generator for a semiconductor memory improves the reliability of the erasing operation. A Vcc voltage detecting unit detects an intensity of a Vcc voltage, which is an external power source, to provide first and second Vcc voltages. A charge pump circuit receives the Vcc voltage and provides a VNEG voltage. A clock circuit applies a clock pulse to the charge pump circuit. A voltage regulating circuit receives the first and second Vcc voltages to monitor and control the VNEG voltage and provides a constant VNEG voltage.
REFERENCES:
patent: 4945267 (1990-07-01), Galbraith
patent: 5282170 (1994-01-01), Van Buskirk et al.
patent: 5532915 (1996-07-01), Pantelakis et al.
patent: 5815356 (1998-09-01), Rodriguez et al.
Hyundai Electronics Industries Co,. Ltd.
Tran Andrew Q.
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