Semiconductor memory having a first and second sense...

Details Semiconductor memory having a first and second sense... Semiconductor memory having a first and second sense...

2006-03-07

2006-03-07

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S207000, C365S222000, C365S196000, C365S227000

Reexamination Certificate

active

07009902

ABSTRACT:
Semiconductor memory apparatus and methods of operating the same are provided. The apparatus has at least one first sense amplifier for amplifying a voltage level which has been read from a memory cell when the semiconductor memory apparatus is in an active operating mode and at least one second sense amplifier for amplifying a voltage level which has been read from the memory cell when the semiconductor memory apparatus is in a refresh operating mode. The apparatus is designed such that either the first or the second sense amplifier can be placed in electrical contact with the memory cell and the capacitance of the second sense amplifier is lower than the capacitance of the first sense amplifier.

REFERENCES:
patent: 4811302 (1989-03-01), Koishi
patent: 5731718 (1998-03-01), Rieger
patent: 6452854 (2002-09-01), Kato et al.
patent: 2002/0027234 (2002-03-01), Kato et al.
patent: 195 36 486 (1997-08-01), None
German Patent Office Examination Report dated Dec. 10, 2004.

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