Semiconductor memory elements having quantum box floating gates

Details Semiconductor memory elements having quantum box floating gates Semiconductor memory elements having quantum box floating gates

1997-03-17

1999-03-23

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 9, 257 24, 257347, H01L 29788, H01L 2906

Patent

active

058863800

ABSTRACT:
A substrate has an insulating surface; a fine wire region disposed on the insulating surface of the substrate and extending long in one direction; a first insulating film formed on the fine wire region at least at a partial area along the longitudinal direction of the fine wire region; and a first micro box region formed on the first insulating film over the fine wire region at a partial area along the longitudinal direction of the fine wire region a semiconductor device. The semiconductor device has a fine wire region and a micro box region to realize control of a single electron level. The manufacturing method for the semiconductor device is also disclosed.

REFERENCES:
patent: 5600163 (1997-02-01), Yano et al.
patent: 5691552 (1997-11-01), Oyama
patent: 5714766 (1998-02-01), Chen et al.

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