Semiconductor memory element and lifetime operation starting...

Details Semiconductor memory element and lifetime operation starting... Semiconductor memory element and lifetime operation starting...

2007-12-04

2007-12-04

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S040000, C257S922000

Reexamination Certificate

active

11639333

ABSTRACT:
An example memory includes an address control portion, a protection film, a property deterioration material layer, data storage areas, and bonding pads. The protection film protects an organic semiconductor layer of a semiconductor circuit and prevents intrusion of moisture or chemical molecules in the air, light, or the like, into the organic semiconductor layer. Deterioration of the organic semiconductor layer is started by breaking the protection film and using a specified means, thus starting operation of the lifetime period. The property deterioration material layer contains a material for deteriorating the property of the organic semiconductor and deterioration of the organic semiconductor layer is started, for example, by diffusing the material into the organic semiconductor layer.

REFERENCES:
patent: 61-115297 (1986-06-01), None
patent: 5-159592 (1993-06-01), None
patent: 10-222426 (1998-08-01), None
International Search Report, dated Sep. 2003.

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