Semiconductor memory drive

Details Semiconductor memory drive Semiconductor memory drive

1981-08-24

1983-09-20

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365218, 357 23, G11C 1140

Patent

active

044059957

ABSTRACT:
An improved semiconductor memory device is provided, which has: (i) a first gate electrode in an electrically floating state, at least a part of which confronts a channel region of a semiconductor device and which is separated by an insulating layer from the channel region; (ii) a second gate electrode (i.e., a control electrode), at least a part of which confronts the first gate electrode and is separated by an insulating layer from the first gate electrode; and (iii) a third gate electrode (i.e., an erasing electrode), at least a part of which confronts the first gate electrode and is separated by an insulating layer from the first gate electrode. The insulating layer, separating at least a part of the erasing electrode from the first gate electrode, has a thickness (usually 50 to 300 A) sufficient to allow the passage of charges from the first gate electrode to the erasing electrode through a tunneling effect, thereby discharging the first gate electrode.

REFERENCES:
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 4161039 (1979-07-01), Rossler

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