Semiconductor memory devices having column redundancy...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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Details

C365S189020, C365S225700, C365S230030

Reexamination Certificate

active

10999182

ABSTRACT:
Semiconductor memory devices include a memory array having a plurality of multi-column memory blocks therein and a multi-column redundant memory block. A redundancy column selecting unit is provided, which is configured to route data read from the multi-column redundant memory block to a redundant data line, in response to a column address. A data input/output unit is also provided. This data input/output unit is connected to the redundant data line and a data line associated with a defective column in the memory array. The data input/output unit is configured to respond to an instruction to read first data from a defective column in the memory array by routing first data read from a selected redundant column in the multi-column redundant memory block to an input/output bus while concurrently blocking data read from the defective column from being transferred to the input/output bus.

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patent: 1020020002913 (2002-01-01), None
patent: 1020030044413 (2003-06-01), None

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