Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-05-15
2007-05-15
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189020, C365S225700, C365S230030
Reexamination Certificate
active
10999182
ABSTRACT:
Semiconductor memory devices include a memory array having a plurality of multi-column memory blocks therein and a multi-column redundant memory block. A redundancy column selecting unit is provided, which is configured to route data read from the multi-column redundant memory block to a redundant data line, in response to a column address. A data input/output unit is also provided. This data input/output unit is connected to the redundant data line and a data line associated with a defective column in the memory array. The data input/output unit is configured to respond to an instruction to read first data from a defective column in the memory array by routing first data read from a selected redundant column in the multi-column redundant memory block to an input/output bus while concurrently blocking data read from the defective column from being transferred to the input/output bus.
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Kang Sang-Chul
Kim Hyung-Min
Myers Bigel Sibley & Sajovec P.A.
Pham Ly Duy
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