Semiconductor memory devices

Static information storage and retrieval – Systems using particular element – Capacitors

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Details

365189, G11C 1124

Patent

active

047991933

ABSTRACT:
A semiconductor memory device having at least one memory cell array block with a plurality of memory cells formed at the surface of a semiconductor substrate. Each memory cell includes a transistor and memory capacitor. The device further has a plurality of word lines for addressing the memory cells, a plurality of bit lines for reading from and writing to the memory capacitors, at least one cell plate formed on the semiconductor substrate, the cell plate forming a common electrode of the memory capacitors, a cell plate voltage generator for supplying a voltage of a level between the supply voltage and the ground voltage to the cell plate, and a control circuit for controlling the output impedance of the cell plate voltage generating unit.

REFERENCES:
patent: 4491936 (1985-01-01), Eaton, Jr. et al.
patent: 4520466 (1985-05-01), Mashiko
patent: 4593382 (1986-06-01), Fujishima et al.

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