Semiconductor memory device with voltage bootstrap

Details Semiconductor memory device with voltage bootstrap Semiconductor memory device with voltage bootstrap

1986-10-28

1988-09-06

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Data refresh

365203, 365204, G11C 1140, G11C 1300

Patent

active

047697920

ABSTRACT:
Two or more voltage bootstrap circuits are included, and are sequentially operated. A continuous data write/read operation can be performed at a high speed. One of the two voltage bootstrap circuits is used for the data write/read operation and the other thereof is used for the refresh operation, thereby shortening the time required for refreshing.

REFERENCES:
Nakano et al., "A Sub-100 ns 256 K Dram with Open Bit Line Scheme," IEEE-JSSC, vol. SC 18, No. 5, pp. 452-456, Oct. 1983.

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