Semiconductor memory device with variable resistance elements

Details Semiconductor memory device with variable resistance elements Semiconductor memory device with variable resistance elements

2007-11-29

2011-11-15

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189160

Reexamination Certificate

active

08059448

ABSTRACT:
A semiconductor memory device comprises a memory cell array including memory cells arranged in matrix each having a selective transistor and a variable resistance element having an electric resistance changed from a first state to a second state by applying a first write voltage and from the second state to the first state by applying a second write voltage. A first write current for a first writing operation to change the electric resistance from the first state to the second state is larger than a second write current for a second writing operation to change it from the second state to the first state. A second memory cell number of memory cells subjected to the second writing operation at a time is greater than a first memory cell number of memory cells subjected to the first writing operation at a time. At least the second memory cell number is plural.

REFERENCES:
patent: 6888773 (2005-05-01), Morimoto
patent: 7057922 (2006-06-01), Fukumoto
patent: 2004/0114438 (2004-06-01), Morimoto
patent: 2004/0264244 (2004-12-01), Morimoto
patent: 2005/0122768 (2005-06-01), Fukumoto
patent: 2005/0174854 (2005-08-01), Tsushima et al.
patent: 2002-170389 (2002-06-01), None
patent: 2004-185754 (2004-07-01), None
patent: 2005-025914 (2005-01-01), None
patent: 2005-092912 (2005-04-01), None
patent: 2005-216387 (2005-08-01), None
patent: 2006-120701 (2006-05-01), None
Sawa et al., Applied Physics Letters, vol. 85, No. 18, Nov. 1, 2004, pp. 4073-4075.
International Search Report mailed Mar. 18, 2008, directed to counterpart PCT Application No. PCT/JP2007/073023; 2 pages.
Japanese Office Action mailed Mar. 7, 2008, directed to counterpart JP Application No. 2006-332325; 10 pages.
International Search Report mailed Mar. 18, 2008, directed to counterpart PCT Application No. PCT/JP2007/073023; 2 pages.
Japanese Office Action mailed Mar. 7, 2008, directed to counterpart JP Application No. 2006-332325; 10 pages.

Affiliated with

Also associated with

Rating

Semiconductor memory device with variable resistance elements does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with variable resistance elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with variable resistance elements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4277448