Semiconductor memory device with three dimensional solid...

Details Semiconductor memory device with three dimensional solid... Semiconductor memory device with three dimensional solid...

2006-03-01

2010-06-08

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S005000, C257SE45002

Reexamination Certificate

active

07732799

ABSTRACT:
The semiconductor memory device includes a variable resistance device having a solid electrolyte in a three-dimensional structure. The variable resistance device includes a first electrode; the solid electrolyte, which has at least two regions with different heights, formed on the first electrode; and a second electrode made of a conductive material formed on the solid electrolyte to cover the regions with different heights. In addition, a multibit semiconductor memory device is provided which includes a bias circuit that can control the intensity of a current and time the current is supplied to the variable resistance device inside a memory cell in multiple steps to configure multibits.

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Official Action issued by the Korean Intellectual Property Office on Oct. 26, 2006, in priority Korean Application No. 10-2005-0021844, and English Abstract thereof.

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