Semiconductor memory device with superimposed storage electrodes

Details Semiconductor memory device with superimposed storage electrodes Semiconductor memory device with superimposed storage electrodes

1994-12-08

1996-07-30

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257308, 257309, 257908, H01L 27108

Patent

active

055414281

ABSTRACT:
In a semiconductor memory device, storage electrodes of two memory cells adjacent to each other are superimposed with each other, with their contours being substantially aligned. As a result, the storage electrodes are extended to cover two memory cell regions. The superimposed storage electrodes are electrically insulated from each other, and the upper storage electrode extends through the lower storage electrode.

REFERENCES:
patent: 5103275 (1992-04-01), Miura et al.
Inoue et al., "A Spread Stacked Capacitor (SSC) Cell for 64 Mbit DRAMs," International Electron Device Meeting (IEDM), pp. 31-34, Dec. 3-6, 1989.

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