Semiconductor memory device with step-down transistor for extern

Details Semiconductor memory device with step-down transistor for extern Semiconductor memory device with step-down transistor for extern

1991-09-13

1994-02-08

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365226, 365233, 307475, G11C 11408

Patent

active

052854124

ABSTRACT:
A 16 megabit dynamic random access memory device is active with an internal power voltage lower than an external power voltage for preventing extremely thin gate oxide films of the component field effect transistors from damage, a field effect transistor is coupled between an input terminal applied with an external signal as high as the external power voltage and an input logic gate for producing an internal signal as low as the internal power voltage, and the field effect transistor is supplied at the gate electrode with the internal power voltage so that the external signal steps down before reaching the input logic gate.

REFERENCES:
patent: 4216390 (1980-08-01), Stewart
patent: 4574273 (1986-03-01), Atsumi et al.
patent: 4616143 (1986-10-01), Miyamoto
patent: 4820941 (1989-04-01), Dolby et al.
patent: 4926070 (1990-05-01), Tanaka et al.
patent: 5084637 (1992-01-01), Gregor

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