Semiconductor memory device with stack type memory cell

Details Semiconductor memory device with stack type memory cell Semiconductor memory device with stack type memory cell

1994-04-13

1995-08-22

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

257296, 257306, 257307, 257308, H01L 2968

Patent

active

054446538

ABSTRACT:
Disclosed is a semiconductor memory device which has stack type memory cells each comprising one MIS transistor and one MIS capacitor. A first conductive film having a predetermined thickness is arranged to overlay a memory node contact of a memory cell which corresponds to a source or drain region of the MIS transistor. A second conductive film is formed on the surface of the first conductive film to have a predetermined thickness and come in contact with the source or drain region by means of a memory node contact hole formed inside the memory node contact. The first and second conductive films form a capacitor electrode of the MIS capacitor.

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patent: 5101251 (1992-03-01), Wakamiya et al.
patent: 5183772 (1993-02-01), Jin et al.
patent: 5185284 (1993-03-01), Motonami
patent: 5225698 (1993-07-01), Kim et al.
patent: 5323037 (1994-06-01), Su

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