Static information storage and retrieval – Read/write circuit – Plural use of terminal
Patent
1993-06-02
1995-02-21
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Plural use of terminal
36518901, 36523001, 36523003, 36523006, 36523008, G11C 700, G11C 1134
Patent
active
053922425
ABSTRACT:
A dynamic random access memory device has a data line pair shared between a plurality of memory cell arrays, and a column address decoder unit allows one of column selectors to couple one of the associated bit line pairs with the shared data line pair so that the data line pair is not increased together with the memory capacity.
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"A 256K Dynamic RAM with Page-Nibble Mode" by IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, Oct. 1983, pp. 470-477.
NEC Corporation
Nguyen Viet Q.
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