Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-06-05
2007-06-05
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S230080, C365S051000, C365S200000, C365S195000
Reexamination Certificate
active
11113017
ABSTRACT:
A semiconductor memory device includes a plurality of first fuse latch circuits configured to provide redundancy to first addresses, a plurality of second fuse latch circuits configured to provide redundancy to second addresses, and a nullifying circuit configured to make the plurality of second fuse latch circuits ineffective, wherein first fuse positions corresponding to the plurality of first fuse latch circuits intervene between second fuse positions corresponding to the plurality of second fuse latch circuits.
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Ito Shigemasa
Kawabata Kuninori
Kikutake Akira
Arent Fox LLP.
Hur J. H.
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