Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-08-27
2009-10-27
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S185250
Reexamination Certificate
active
07609576
ABSTRACT:
A semiconductor memory device includes a memory cell array including a plurality of memory cell transistors, an X decoder designating a position of an X axis of the memory cell, a Y decoder designating a position of a Y axis crossing the X axis, a controller collectively controlling operations of read, write and erase of the memory cell transistors via the X decoder and the Y decoder, a semiconductor time switch generating an output signal after a predetermined life time elapses without a power source, and a refresh trigger circuit receiving the output signal from the semiconductor time switch, and giving the controller instructions to transfer information stored in one area of the memory cell array to other area thereof to refresh the information.
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Tanaka Tatsuya
Watanabe Hiroshi
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phung Anh
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