Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1989-01-19
1990-06-19
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Bad bit
3652257, G11C 700
Patent
active
049358995
ABSTRACT:
In a semiconductor memory device with a redundant memory cell array provided in association with a memory cell array partially replacable with the redundant memory cells, each programming circuit has a conduction path flowing a current in the absence of a defective memory cell for shifting a redundant memory controller into an inactive state, a redundant memory activation circuit produces an enable signal in the presence of the detective memory cell for shifting the controller into an active state and further produces a disenable signal in the absence of the defective memory cell, and a blocking transistor is provided in the conduction path and responsive to the disenable signal to block the conduction path, thereby causing the amount of current consumed to be decreased.
REFERENCES:
patent: 4720817 (1988-01-01), Childers
patent: 4731759 (1988-03-01), Watanabe
NEC Corporation
Popek Joseph A.
LandOfFree
Semiconductor memory device with redundant memory cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device with redundant memory cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with redundant memory cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2264344