Semiconductor memory device with redundancy circuit having a ref

Details Semiconductor memory device with redundancy circuit having a ref Semiconductor memory device with redundancy circuit having a ref

1999-10-19

2000-09-26

Tran, Andrew Q.

Static information storage and retrieval

Read/write circuit

Having fuse element

365200, 36523008, 326 12, 326 13, 327199, 327525, 327526, G11C 700, H03K 19007

Patent

active

061250694

ABSTRACT:
A semiconductor memory device with a redundancy circuit includes a reference section, a fuse section and a latch section. The reference section includes a reference resistance and supplies a first current to the reference resistance. The fuse section includes a fuse and supplies a second current to the fuse. The second current is proportional to the first current. The latch section has a threshold and latches a fuse state data based on the threshold and a voltage drop across the fuse. The fuse state data indicates whether or not the fuse is cut.

REFERENCES:
patent: 5345110 (1994-09-01), Renfro et al.
patent: 5617366 (1997-04-01), Yoo
patent: 5619469 (1997-04-01), Joo
patent: 5929691 (1999-07-01), Kim et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device with redundancy circuit having a ref does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with redundancy circuit having a ref, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with redundancy circuit having a ref will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2105855