Semiconductor memory device with reduced leakage current and imp

Details Semiconductor memory device with reduced leakage current and imp Semiconductor memory device with reduced leakage current and imp

1996-10-30

1998-07-14

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36518909, 36523006, G11C 800

Patent

active

057814813

ABSTRACT:
A semiconductor memory device has memory cells in which data are represented by a first voltage level and a second voltage level higher than the first voltage level. The memory cells are selected by word lines. When memory cells are not selected, the word lines are driven to a third voltage level lower than the first voltage level.

REFERENCES:
patent: 5257238 (1993-10-01), Lee et al.
patent: 5410508 (1995-04-01), McLaury
patent: 5416747 (1995-05-01), Ohira
patent: 5617369 (1997-04-01), Tomishima et al.

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