Semiconductor memory device with means to prevent word line brea

Static information storage and retrieval – Magnetic bubbles – Guide structure

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Details

357 65, 357236, 357 71, 365144, H01L 2350, H01L 2354, H01L 2710, H01L 2944

Patent

active

047316420

ABSTRACT:
A semiconductor memory device having wiring formed next to word lines at the extreme ends of the memory cell arrays or next to word lines of the dummy cell arrays, in order to prevent such word lines from breaking or from becoming deformed. The wiring is irrelevant to the circuit operation, but is provided with a fixed potential, and is formed through the steps of forming the word lines. The wiring makes the processing conditions applied to the neighboring word lines the same as the processing conditions applied to other word lines.

REFERENCES:
patent: 4491858 (1985-01-01), Kawamoto

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