Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-04-08
2008-04-08
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000, C257S241000
Reexamination Certificate
active
07355885
ABSTRACT:
A semiconductor memory device includes memory cells, first wirings, a first current driver circuit, and a second current driver circuit. The memory cell includes a magneto-resistive element having a first ferromagnetic film, an insulating film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the insulating film. The first wiring is provided in close proximity to and insulated from the magneto-resistive element. The first current driver circuit supplies a first current to the first wiring in a write operation to produce a magnetic field around the magneto-resistive elements. The second current driver circuit supplies a second current between the first and second ferromagnetic films via the insulating film in a write and a read operation.
REFERENCES:
patent: 6515341 (2003-02-01), Engel et al.
patent: 6829157 (2004-12-01), Kim et al.
patent: 6980468 (2005-12-01), Ounadjela
patent: 2002/0089874 (2002-07-01), Nickel et al.
patent: 2002/0105827 (2002-08-01), Redon et al.
patent: 2 343 308 (2000-05-01), None
patent: 2001-156357 (2001-06-01), None
patent: 2002-8368 (2002-01-01), None
patent: 2003-60173 (2003-02-01), None
patent: 2001-0100953 (2001-11-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC 2000, Session 7, TD: Emerging Memory & Device Technologies, Pater TA 7.2, pp. 128-129.
Masashige Sato, et at., “Spin-Valve-Like Properties of Perromagnetic Tunnel Junctions”, Jpn. J. Appl. Phys., vol. 36, Part 2, No. 2B, Feb. 15, 1997, pp. L200-L201.
R.S. Beech, et al. “Curie Point Written Magnetoresistive Memory” Journal of Applied Physics, vol. 87, No. 9, May 1, 2000, pp. 6403-6405.
Kabushiki Kaisha Toshiba
Nguyen Vanthu
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Semiconductor memory device with magnetoresistance elements... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device with magnetoresistance elements..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with magnetoresistance elements... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2761734